Today's Hard|Forum Post
Today's Hard|Forum Post

Tuesday May 17, 2016

IBM Scientists Achieve Storage Memory Breakthrough

IBM's new optical storage is roughly fifty times faster than flash. According to the press release, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell and retaining the information at elevated temperatures using a relatively new memory technology, known as phase-change memory.

The current memory landscape spans from venerable DRAM to hard disk drives to ubiquitous flash. But in the last several years PCM has attracted the industry's attention as a potential universal memory technology based on its combination of read/write speed, endurance, non-volatility and density. For example, PCM doesn't lose data when powered off, unlike DRAM, and the technology can endure at least 10 million write cycles, compared to an average flash USB stick, which tops out at 3,000 write cycles.

Comments