Thursday February 25, 2016

Samsung Introduces Industry’s First 256-Gigabyte Universal Flash Storage

Samsung Electronics, the world leader in advanced memory technology, announced that it is now mass producing the industry’s first 256-gigabyte (GB) embedded memory based on the Universal Flash Storage (UFS) 2.0 standard, for next-generation high-end mobile devices. The newly introduced embedded memory features outstanding performance for mobile devices that exceeds that of a typical SATA-based SSD for PCs.

The new Samsung UFS memory satisfies needs for ultra-fast speed, large data capacity and compact chip size in high-end smartphones. It is based on the company’s most advanced V-NAND flash memory chips and a specially-designed high-performance controller. The UFS memory handles up to 45,000 and 40,000 input/output operations per second (IOPS) for random reading and writing respectively, over two times faster than the 19,000 and 14,000 IOPS of the previous generation of UFS memory.