Tuesday August 30, 2011

GLOBALFOUNDRIES and Samsung Extend Fab Sync to New High-Performance 28nm Technology

GLOBALFOUNDRIES and Samsung Electronics, Co., Ltd. broadened their collaboration, announcing plans to synchronize global semiconductor fabrication facilities to produce chips based on a new high-performance and low-leakage 28nm High-K Metal Gate (HKMG) technology. The technology has been specifically developed for mobile device applications, offering 60 percent of active power reduction at the same frequency or 55 percent of performance boost at the same leakage over 45nm low power (LP) SoC designs.

The companies are proving the collaborative value of a synchronized platform by working with several customers to optimize processes and tooling for both the low-power and high-performance 28nm HKMG technologies. The synchronization process helps ensure consistent production worldwide, enabling customer chip designs to be produced at multiple sources with no redesign required, leveraging the customers’ design investments.

For those of you that might have missed it, make sure you watch our GlobalFoundries ITDC laboratory tour video.