Toshiba to Launch 43nm SLC NAND Flash Memory

Toshiba Corp. and Toshiba America Electronic Components, Inc., its subsidiary in the Americas, today announced the launch of a new line-up of 43nm Single-Level Cell (SLC) NAND flash memory products available in densities ranging from 512Mbits(1) to 64Gbits(2) and in a total of 16 versions. The new range includes three products, 16Gb, 32Gb and 64Gb, which integrate 43nm monolithic 16Gb chips, the highest density SLC NAND chips available(3). The new devices will come to market from the first quarter of 2009.