Samsung Introduces 60nm 2Gb DDR2 DRAM
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has developed the industry’s first 60 nanometer (nm)-class 2 gigabit DDR2 DRAM and will begin mass producing it later this year. Compared with 80nm 2Gb DDR2, the 60 nanometer (nm)-class with a speed of 800 megabits per second has improved DRAM performance up to 20%. Moreover, production efficiency for the new 2Gb DDR2 will be enhanced by about 40 percent using the finer 60nm-class process technology.
