Wednesday September 12, 2007

Samsung Introduces 60nm 2Gb DDR2 DRAM

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has developed the industry’s first 60 nanometer (nm)-class 2 gigabit DDR2 DRAM and will begin mass producing it later this year. Compared with 80nm 2Gb DDR2, the 60 nanometer (nm)-class with a speed of 800 megabits per second has improved DRAM performance up to 20%. Moreover, production efficiency for the new 2Gb DDR2 will be enhanced by about 40 percent using the finer 60nm-class process technology.